SI5511DC-T1-E3
SI5511DC-T1-E3
Part Number:
SI5511DC-T1-E3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET N/P-CH 30V 4A 1206-8
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
50954 Pieces
Delivery Time:
1-2 days
Data sheet:
SI5511DC-T1-E3.pdf

Introduction

SI5511DC-T1-E3 best price and fast delivery.
BOSER Technology is the distributor for SI5511DC-T1-E3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SI5511DC-T1-E3 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:2V @ 250µA
Supplier Device Package:1206-8 ChipFET™
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:55 mOhm @ 4.8A, 4.5V
Power - Max:3.1W, 2.6W
Packaging:Tape & Reel (TR)
Package / Case:8-SMD, Flat Lead
Other Names:SI5511DC-T1-E3TR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:435pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:7.1nC @ 5V
FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Detailed Description:Mosfet Array N and P-Channel 30V 4A, 3.6A 3.1W, 2.6W Surface Mount 1206-8 ChipFET™
Current - Continuous Drain (Id) @ 25°C:4A, 3.6A
Base Part Number:SI5511
Email:[email protected]

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