| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 55 mOhm @ 4.3A, 4.5V |
| Power - Max: | 3.1W |
| Packaging: | Original-Reel® |
| Package / Case: | 8-SMD, Flat Lead |
| Other Names: | SI5513CDC-T1-E3DKR |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 285pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 4.2nC @ 5V |
| FET Type: | N and P-Channel |
| FET Feature: | Logic Level Gate |
| Drain to Source Voltage (Vdss): | 20V |
| Detailed Description: | Mosfet Array N and P-Channel 20V 4A, 3.7A 3.1W Surface Mount |
| Current - Continuous Drain (Id) @ 25°C: | 4A, 3.7A |
| Email: | [email protected] |
