| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Supplier Device Package: | PowerPAK® ChipFet Dual |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 39 mOhm @ 4.4A, 4.5V |
| Power - Max: | 8.3W |
| Packaging: | Cut Tape (CT) |
| Package / Case: | PowerPAK® ChipFET™ Dual |
| Other Names: | SI5517DU-T1-GE3CT |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 33 Weeks |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 520pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 8V |
| FET Type: | N and P-Channel |
| FET Feature: | Logic Level Gate |
| Drain to Source Voltage (Vdss): | 20V |
| Detailed Description: | Mosfet Array N and P-Channel 20V 6A 8.3W Surface Mount PowerPAK® ChipFet Dual |
| Current - Continuous Drain (Id) @ 25°C: | 6A |
| Base Part Number: | SI5517 |
| Email: | [email protected] |
