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Bahay > Mga Produkto > Discrete Semiconductor Produkto > Transistors - FETs, MOSFETs - Single > TK12E60W,S1VX
TK12E60W,S1VX
TK12E60W,S1VX
Numero ng Bahagi:
TK12E60W,S1VX
Manufacturer:
Toshiba Semiconductor and Storage
Paglalarawan:
MOSFET N CH 600V 11.5A TO-220
[LeadFreeStatus]未找到翻译
Lead libreng / RoHS compliant
Dami:
65210 Pieces
Oras ng paghatid:
1-2 days
Data sheet:
TK12E60W,S1VX.pdf
Pagtatanong

pagpapakilala

TK12E60W,S1VX pinakamahusay na presyo at mabilis na paghahatid.
BOSER Technology ay ang distributor para sa TK12E60W,S1VX, mayroon kaming mga stock para sa agarang pagpapadala at magagamit din para sa mahabang panahon supply. Mangyaring ipadala sa amin ang iyong plano sa pagbili para sa TK12E60W,S1VX sa pamamagitan ng email, bibigyan ka namin ng pinakamahusay na presyo ayon sa iyong plano.
Ang aming email: [email protected]

Mga pagtutukoy

Kondisyon New and Original
Pinanggalingan Contact us
Distributor Boser Technology
Vgs (th) (Max) @ Id:3.7V @ 600µA
Vgs (Max):±30V
teknolohiya:MOSFET (Metal Oxide)
Supplier aparato Package:TO-220
serye:DTMOSIV
Rds On (Max) @ Id, Vgs:300 mOhm @ 5.8A, 10V
Power pagwawaldas (Max):110W (Tc)
packaging:Tube
Package / Kaso:TO-220-3
Ibang pangalan:TK12E60W,S1VX(S
TK12E60WS1VX
operating Temperature:150°C (TJ)
Salalayan Type:Through Hole
Ang Sensitivity Level (MSL):1 (Unlimited)
Lead Libreng Status / Katayuan ng RoHS:Lead free / RoHS Compliant
Input Kapasidad (Ciss) (Max) @ Vds:890pF @ 300V
Gate Charge (Qg) (Max) @ Vgs:25nC @ 10V
Type FET:N-Channel
FET Tampok:Super Junction
Drive Boltahe (Max Rds On, Min Rds On):10V
Alisan ng tubig sa Source Boltahe (Vdss):600V
Detalyadong Paglalarawan:N-Channel 600V 11.5A (Ta) 110W (Tc) Through Hole TO-220
Current - Ang patuloy Drain (Id) @ 25 ° C:11.5A (Ta)
Email:[email protected]

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