| Kondisi | New and Original |
|---|---|
| Asal | Contact us |
| Distributor | Boser Technology |
| Vgs (th) (Max) @ Id: | - |
| Vgs (Max): | - |
| Teknologi: | SiC (Silicon Carbide Junction Transistor) |
| Paket Perangkat pemasok: | TO-257 |
| Seri: | - |
| Rds Pada (Max) @ Id, Vgs: | 105 mOhm @ 15A |
| Power Disipasi (Max): | 172W (Tc) |
| Pengemasan: | Bulk |
| Paket / Case: | TO-257-3 |
| Nama lain: | 1242-1150 |
| Suhu Operasional: | -55°C ~ 225°C (TJ) |
| mount Jenis: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Status Gratis Memimpin / Status RoHS: | Contains lead / RoHS non-compliant |
| Kapasitansi Masukan (Ciss) (Max) @ VDS: | 1534pF @ 35V |
| FET Jenis: | - |
| Fitur FET: | - |
| Drive Voltage (Max Rds On, Min RDS Aktif): | - |
| Tiriskan untuk Sumber Tegangan (Vdss): | 650V |
| Detil Deskripsi: | 650V 15A (Tc) (155°C) 172W (Tc) Through Hole TO-257 |
| Current - Continuous Drain (Id) @ 25 ° C: | 15A (Tc) (155°C) |
| Email: | [email protected] |
