| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Vgs(th) (Max) @ Id: | - |
| Vgs (Max): | - |
| Technology: | SiC (Silicon Carbide Junction Transistor) |
| Supplier Device Package: | TO-257 |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 105 mOhm @ 15A |
| Power Dissipation (Max): | 172W (Tc) |
| Packaging: | Bulk |
| Package / Case: | TO-257-3 |
| Other Names: | 1242-1150 |
| Operating Temperature: | -55°C ~ 225°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 1534pF @ 35V |
| FET Type: | - |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Drain to Source Voltage (Vdss): | 650V |
| Detailed Description: | 650V 15A (Tc) (155°C) 172W (Tc) Through Hole TO-257 |
| Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) (155°C) |
| Email: | [email protected] |
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