| État | New and Original |
|---|---|
| Origine | Contact us |
| Distributeur | Boser Technology |
| Tension - Cutoff (VGS off) @ Id: | 5V @ 10µA |
| Package composant fournisseur: | SSMini3-F3-B |
| Séries: | - |
| Puissance - Max: | 125mW |
| Emballage: | Tape & Reel (TR) |
| Package / Boîte: | SC-89, SOT-490 |
| Autres noms: | DSK9J01P0LTR |
| Température de fonctionnement: | 150°C (TJ) |
| Type de montage: | Surface Mount |
| Niveau de sensibilité à l'humidité (MSL): | 1 (Unlimited) |
| Délai de livraison standard du fabricant: | 11 Weeks |
| Statut sans plomb / Statut RoHS: | Lead free / RoHS Compliant |
| Capacité d'entrée (Ciss) (Max) @ Vds: | 6pF @ 10V |
| type de FET: | N-Channel |
| Tension drain-source (Vdss): | 55V |
| Description détaillée: | JFET N-Channel 30mA 125mW Surface Mount SSMini3-F3-B |
| Consommation de courant (Id) - Max: | 30mA |
| Courant - Drain (Idss) @ Vds (VGS = 0): | 1mA @ 10V |
| Numéro de pièce de base: | DSK9J01 |
| Email: | [email protected] |
| image | Modèle de produit | Fabricant | La description | Vue |
|---|---|---|---|---|
 |
DSK10B-BT | ON Semiconductor | DIODE GEN PURP 100V 1A AXIAL | Enquête |
 |
DSK10E-BT | ON Semiconductor | DIODE GEN PURP 400V 1A AXIAL | Enquête |
 |
J111 | AMI Semiconductor / ON Semiconductor | JFET N-CH 35V 625MW TO92 | Enquête |
 |
DSK-3R3H224U-HL | Elna America | CAP 220MF -20% +80% 3.3V SMD | Enquête |
|
DSK-3R3H204T614-H2L | Elna America | CAP 200MF -20% +80% 3.3V SMD | Enquête |
|
DSK10B | ON Semiconductor | DIODE GEN PURP 100V 1A AXIAL | Enquête |
|
DSK10E-ET1 | ON Semiconductor | DIODE GEN PURP 400V 1A AXIAL | Enquête |
|
DSK10C-AT1 | ON Semiconductor | DIODE GEN PURP 200V 1A AXIAL | Enquête |
|
DSK10E | ON Semiconductor | DIODE GEN PURP 400V 1A AXIAL | Enquête |
|
DSK-3R3H703T414-HRL | Elna America | CAP 70MF -20% +80% 3.3V SMD | Enquête |
|
DSK-3R3H334T-HL | Elna America | CAP 330MF -20% +80% 3.3V SMD | Enquête |
 |
MMBFJ175LT3G | AMI Semiconductor / ON Semiconductor | JFET P-CH 30V 0.225W SOT23 | Enquête |
|
DSK10B-AT1 | ON Semiconductor | DIODE GEN PURP 100V 1A AXIAL | Enquête |
|
DSK-3R3H703T414-HLL | Elna America | CAP 70MF -20% +80% 3.3V SMD | Enquête |
|
DSK10C | ON Semiconductor | DIODE GEN PURP 200V 1A AXIAL | Enquête |
|
DSK10C-BT | ON Semiconductor | DIODE GEN PURP 200V 1A AXIAL | Enquête |
 |
DSK5J01P0L | Panasonic | JFET N-CH 30MA 150MW SMINI3-F2-B | Enquête |
|
DSK10E-AT1 | ON Semiconductor | DIODE GEN PURP 400V 1A AXIAL | Enquête |
|
DSK10C-ET1 | ON Semiconductor | DIODE GEN PURP 200V 1A AXIAL | Enquête |
|
DSK5J01Q0L | Panasonic | JFET N-CH 30MA 150MW SMINI3-F2-B | Enquête |