| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 1V @ 250µA |
| Leverandør Device Package: | PowerPAK® ChipFet Dual |
| Serie: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 39 mOhm @ 4.4A, 4.5V |
| Strøm - Max: | 8.3W |
| Emballage: | Cut Tape (CT) |
| Pakke / tilfælde: | PowerPAK® ChipFET™ Dual |
| Andre navne: | SI5517DU-T1-E3CT SI5517DUT1E3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 520pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 8V |
| FET Type: | N and P-Channel |
| FET-funktion: | Logic Level Gate |
| Afløb til Source Voltage (VDSS): | 20V |
| Detaljeret beskrivelse: | Mosfet Array N and P-Channel 20V 6A 8.3W Surface Mount PowerPAK® ChipFet Dual |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 6A |
| Basenummer: | SI5517 |
| Email: | [email protected] |
