| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 3V @ 250µA |
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | 8-SO |
| Serie: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 22 mOhm @ 6A, 10V |
| Power Dissipation (Max): | 1.7W (Ta) |
| Emballage: | Cut Tape (CT) |
| Pakke / tilfælde: | 8-SOIC (0.154", 3.90mm Width) |
| Andre navne: | SI4850EY-T1-GE3CT |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Drevspænding (Maks. RDS On, Min Rds On): | 4.5V, 10V |
| Afløb til Source Voltage (VDSS): | 60V |
| Detaljeret beskrivelse: | N-Channel 60V 6A (Ta) 1.7W (Ta) Surface Mount 8-SO |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 6A (Ta) |
| Email: | [email protected] |
