SI4850EY-T1-GE3
Part Number:
SI4850EY-T1-GE3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET N-CH 60V 6A 8-SOIC
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
56017 Pieces
Delivery Time:
1-2 days
Data sheet:
SI4850EY-T1-GE3.pdf

Introduction

SI4850EY-T1-GE3 best price and fast delivery.
BOSER Technology is the distributor for SI4850EY-T1-GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SI4850EY-T1-GE3 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:3V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-SO
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:22 mOhm @ 6A, 10V
Power Dissipation (Max):1.7W (Ta)
Packaging:Cut Tape (CT)
Package / Case:8-SOIC (0.154", 3.90mm Width)
Other Names:SI4850EY-T1-GE3CT
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs:27nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):60V
Detailed Description:N-Channel 60V 6A (Ta) 1.7W (Ta) Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C:6A (Ta)
Email:[email protected]

Quick Request Quote

Part Number
Quantity
Company
E-mail
Phone
Comments