| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 2.2V @ 250µA |
| Leverandør Device Package: | 8-SO |
| Serie: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 25 mOhm @ 7.3A, 10V |
| Strøm - Max: | 2.8W |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | 8-SOIC (0.154", 3.90mm Width) |
| Andre navne: | SI4200DY-T1-GE3-ND SI4200DY-T1-GE3TR |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 415pF @ 13V |
| Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
| FET Type: | 2 N-Channel (Dual) |
| FET-funktion: | Logic Level Gate |
| Afløb til Source Voltage (VDSS): | 25V |
| Detaljeret beskrivelse: | Mosfet Array 2 N-Channel (Dual) 25V 8A 2.8W Surface Mount 8-SO |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 8A |
| Email: | [email protected] |
