SI4200DY-T1-GE3
Part Number:
SI4200DY-T1-GE3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET 2N-CH 25V 8A 8SOIC
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
30449 Pieces
Delivery Time:
1-2 days
Data sheet:
SI4200DY-T1-GE3.pdf

Introduction

SI4200DY-T1-GE3 best price and fast delivery.
BOSER Technology is the distributor for SI4200DY-T1-GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SI4200DY-T1-GE3 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:2.2V @ 250µA
Supplier Device Package:8-SO
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:25 mOhm @ 7.3A, 10V
Power - Max:2.8W
Packaging:Tape & Reel (TR)
Package / Case:8-SOIC (0.154", 3.90mm Width)
Other Names:SI4200DY-T1-GE3-ND
SI4200DY-T1-GE3TR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:415pF @ 13V
Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):25V
Detailed Description:Mosfet Array 2 N-Channel (Dual) 25V 8A 2.8W Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C:8A
Email:[email protected]

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