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Hjem > Produkter > Diskrete halvlederprodukter > Transistorer - FET'er, MOSFET'er - RF > NE3515S02-T1C-A
NE3515S02-T1C-A
NE3515S02-T1C-A
Varenummer:
NE3515S02-T1C-A
Fabrikant:
CEL (California Eastern Laboratories)
Beskrivelse:
FET RF HFET 12GHZ 2V 10MA S02
[LeadFreeStatus]未找到翻译
Blyfri / RoHS-kompatibel
Antal:
82108 Pieces
Leveringstid:
1-2 days
Datablad:
1.NE3515S02-T1C-A.pdf2.NE3515S02-T1C-A.pdf
Forespørgsel

Introduktion

NE3515S02-T1C-A bedste pris og hurtig levering.
BOSER Technology er distributør for NE3515S02-T1C-A, vi har bestande til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan for NE3515S02-T1C-A via e-mail, vi vil give dig den bedste pris i henhold til din plan.
Vores email: [email protected]

specifikationer

Tilstand New and Original
Oprindelse Contact us
Distributør Boser Technology
Spænding - Test:2V
Spændingsvurdering:4V
Transistor Type:HFET
Leverandør Device Package:S02
Serie:-
Power - Output:14dBm
Emballage:Tape & Reel (TR)
Pakke / tilfælde:4-SMD, Flat Leads
Andre navne:NE3515S02-T1C-A-ND
NE3515S02-T1C-ATR
NE3515S02T1CA
Støj figur:0.3dB
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Gevinst:12.5dB
Frekvens:12GHz
Detaljeret beskrivelse:RF Mosfet HFET 2V 10mA 12GHz 12.5dB 14dBm S02
Nuværende vurdering:88mA
Nuværende - Test:10mA
Basenummer:NE3515
Email:[email protected]

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