| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 4V @ 100µA |
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | IPAK (TO-251) |
| Serie: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 8.4 mOhm @ 47A, 10V |
| Power Dissipation (Max): | 110W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-251-3 Short Leads, IPak, TO-251AA |
| Andre navne: | SP001565188 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 2290pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs: | 69nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Drevspænding (Maks. RDS On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 60V |
| Detaljeret beskrivelse: | N-Channel 60V 56A (Tc) 110W (Tc) Through Hole IPAK (TO-251) |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 56A (Tc) |
| Email: | [email protected] |
