| Bedingung | New and Original |
|---|---|
| Ursprung | Contact us |
| Verteiler | Boser Technology |
| VGS (th) (Max) @ Id: | 4V @ 2mA |
| Vgs (Max): | ±20V |
| Technologie: | MOSFET (Metal Oxide) |
| Supplier Device-Gehäuse: | PG-TO262-3-1 |
| Serie: | SIPMOS® |
| Rds On (Max) @ Id, Vgs: | 33 mOhm @ 33A, 10V |
| Verlustleistung (max): | 175W (Tc) |
| Verpackung: | Tube |
| Verpackung / Gehäuse: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Andere Namen: | SP000013951 |
| Betriebstemperatur: | -55°C ~ 175°C (TJ) |
| Befestigungsart: | Through Hole |
| Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
| Bleifreier Status / RoHS-Status: | Contains lead / RoHS non-compliant |
| Eingabekapazität (Ciss) (Max) @ Vds: | 2500pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 105nC @ 10V |
| Typ FET: | N-Channel |
| FET-Merkmal: | - |
| Antriebsspannung (Max Rds On, Min Rds On): | 10V |
| Drain-Source-Spannung (Vdss): | 100V |
| detaillierte Beschreibung: | N-Channel 100V 47A (Tc) 175W (Tc) Through Hole PG-TO262-3-1 |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C: | 47A (Tc) |
| Email: | [email protected] |
