| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 4V @ 2mA |
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PG-TO262-3-1 |
| Serie: | SIPMOS® |
| Rds On (Max) @ Id, Vgs: | 33 mOhm @ 33A, 10V |
| Power Dissipation (Max): | 175W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Andre navne: | SP000013951 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Blyfri Status / RoHS Status: | Contains lead / RoHS non-compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 2500pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 105nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Drevspænding (Maks. RDS On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 100V |
| Detaljeret beskrivelse: | N-Channel 100V 47A (Tc) 175W (Tc) Through Hole PG-TO262-3-1 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 47A (Tc) |
| Email: | [email protected] |
