| Bedingung | New and Original |
|---|---|
| Ursprung | Contact us |
| Verteiler | Boser Technology |
| VGS (th) (Max) @ Id: | 2.1V @ 100µA |
| Vgs (Max): | ±16V |
| Technologie: | MOSFET (Metal Oxide) |
| Supplier Device-Gehäuse: | DIRECTFET™ MX |
| Serie: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 1.3 mOhm @ 33A, 10V |
| Verlustleistung (max): | 2.1W (Ta), 54W (Tc) |
| Verpackung: | Cut Tape (CT) |
| Verpackung / Gehäuse: | DirectFET™ Isometric MX |
| Andere Namen: | IRF6894MTRPBFCT |
| Betriebstemperatur: | -40°C ~ 150°C (TJ) |
| Befestigungsart: | Surface Mount |
| Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
| Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
| Eingabekapazität (Ciss) (Max) @ Vds: | 4160pF @ 13V |
| Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 4.5V |
| Typ FET: | N-Channel |
| FET-Merkmal: | Schottky Diode (Body) |
| Antriebsspannung (Max Rds On, Min Rds On): | 4.5V, 10V |
| Drain-Source-Spannung (Vdss): | 25V |
| detaillierte Beschreibung: | N-Channel 25V 32A (Ta), 160A (Tc) 2.1W (Ta), 54W (Tc) Surface Mount DIRECTFET™ MX |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C: | 32A (Ta), 160A (Tc) |
| Email: | [email protected] |
