| Bedingung | New and Original |
|---|---|
| Ursprung | Contact us |
| Verteiler | Boser Technology |
| Spannung - Kollektor-Emitter-Durchbruch (max): | 600V |
| VCE (on) (Max) @ Vge, Ic: | 2.5V @ 15V, 62A |
| Testbedingung: | 400V, 62A, 4.7 Ohm, 15V |
| Td (ein / aus) bei 25 ° C: | 28ns/212ns |
| Schaltenergie: | 1.354mJ (on), 1.614mJ (off) |
| Serie: | POWER MOS 8™ |
| Leistung - max: | 780W |
| Verpackung: | Tube |
| Verpackung / Gehäuse: | TO-247-3 Variant |
| Betriebstemperatur: | -55°C ~ 150°C (TJ) |
| Befestigungsart: | Through Hole |
| Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
| Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
| Eingabetyp: | Standard |
| IGBT-Typ: | PT |
| Gate-Ladung: | 294nC |
| detaillierte Beschreibung: | IGBT PT 600V 183A 780W Through Hole |
| Strom - Collector Pulsed (Icm): | 307A |
| Strom - Kollektor (Ic) (max): | 183A |
| Email: | [email protected] |
| Image | Artikelnummer | Hersteller | Beschreibung | Aussicht |
|---|---|---|---|---|
 |
APT10DC120HJ | Microsemi | DIODE SIC SCHOTTKY 1200V SOT227 | Anfrage |
|
APT100MC120JCU2 | Microsemi | MOSFET N-CH 1200V 143A ISOTOP | Anfrage |
 |
APT10M11JVR | Microsemi | MOSFET N-CH 100V 144A ISOTOP | Anfrage |
 |
APT100GT120JU3 | Microsemi | IGBT 1200V 140A 480W SOT227 | Anfrage |
|
APT10M11JVRU3 | Microsemi | MOSFET N-CH 100V 142A SOT227 | Anfrage |
|
APT100GT60JR | Microsemi | IGBT 600V 148A 500W SOT227 | Anfrage |
|
APT10M07JVR | Microsemi | MOSFET N-CH 100V 225A ISOTOP | Anfrage |
 |
APT100GT60B2RG | Microsemi | IGBT 600V 148A 500W SOT247 | Anfrage |
|
APT100GT120JRDQ4 | Microsemi | IGBT 1200V 123A 570W SOT227 | Anfrage |
|
APT100GT120JU2 | Microsemi | IGBT 1200V 140A 480W SOT227 | Anfrage |
 |
APT10M11JVRU2 | Microsemi | MOSFET N-CH 100V 142A SOT227 | Anfrage |
|
APT10M09B2VFRG | Microsemi | MOSFET N-CH 100V 100A T-MAX | Anfrage |
 |
APT100S20LCTG | Microsemi | DIODE ARRAY SCHOTTKY 200V TO264 | Anfrage |
 |
APT10SCD120B | Microsemi | DIODE SCHOTTKY 1.2KV 36A TO247 | Anfrage |
|
APT10M11B2VFRG | Microsemi | MOSFET N-CH 100V 100A T-MAX | Anfrage |
|
APT100M50J | Microsemi | MOSFET N-CH 500V 100A SOT-227 | Anfrage |
|
APT100GT60JRDQ4 | Microsemi | IGBT 600V 148A 500W SOT227 | Anfrage |
|
APT102GA60L | Microsemi | IGBT 600V 183A 780W TO264 | Anfrage |
|
APT106N60B2C6 | Microsemi | MOSFET N-CH 600V 106A TO-247 | Anfrage |
|
APT100S20BG | Microsemi | DIODE SCHOTTKY 200V 120A TO247 | Anfrage |