SSM6K211FE,LF
SSM6K211FE,LF
Part Number:
SSM6K211FE,LF
Manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N-CH 20V 3.2A ES6
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
59159 Pieces
Delivery Time:
1-2 days
Data sheet:
1.SSM6K211FE,LF.pdf2.SSM6K211FE,LF.pdf

Introduction

SSM6K211FE,LF best price and fast delivery.
BOSER Technology is the distributor for SSM6K211FE,LF, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SSM6K211FE,LF by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:1V @ 1mA
Vgs (Max):±10V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:ES6
Series:U-MOSIII
Rds On (Max) @ Id, Vgs:47 mOhm @ 2A, 4.5V
Power Dissipation (Max):500mW (Ta)
Packaging:Tape & Reel (TR)
Package / Case:SOT-563, SOT-666
Other Names:SSM6K211FE(TE85L,F
SSM6K211FE(TE85LFTR
SSM6K211FE(TE85LFTR-ND
SSM6K211FE,LF(CA
SSM6K211FELFTR
SSM6K211FETE85LF
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:510pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:10.8nC @ 4.5V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Drain to Source Voltage (Vdss):20V
Detailed Description:N-Channel 20V 3.2A (Ta) 500mW (Ta) Surface Mount ES6
Current - Continuous Drain (Id) @ 25°C:3.2A (Ta)
Email:[email protected]

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