SI5414DC-T1-GE3
SI5414DC-T1-GE3
Part Number:
SI5414DC-T1-GE3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET N-CH 20V 6A 1206-8
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
81149 Pieces
Delivery Time:
1-2 days
Data sheet:
SI5414DC-T1-GE3.pdf

Introduction

SI5414DC-T1-GE3 best price and fast delivery.
BOSER Technology is the distributor for SI5414DC-T1-GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SI5414DC-T1-GE3 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:1.5V @ 250µA
Vgs (Max):±12V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:1206-8 ChipFET™
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:17 mOhm @ 9.9A, 4.5V
Power Dissipation (Max):2.5W (Ta), 6.3W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:8-SMD, Flat Lead
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:15 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1500pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:41nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Drain to Source Voltage (Vdss):20V
Detailed Description:N-Channel 20V 6A (Tc) 2.5W (Ta), 6.3W (Tc) Surface Mount 1206-8 ChipFET™
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Email:[email protected]

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