| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Vgs (Max): | ±8V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | 1206-8 ChipFET™ |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 20 mOhm @ 6.5A, 4.5V |
| Power Dissipation (Max): | 2.3W (Ta), 5.7W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | 8-SMD, Flat Lead |
| Other Names: | SI5406CDC-T1-GE3TR SI5406CDC-T1-GE3TR-N SI5406CDCT1GE3 |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 6V |
| Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 8V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
| Drain to Source Voltage (Vdss): | 12V |
| Detailed Description: | N-Channel 12V 6A (Tc) 2.3W (Ta), 5.7W (Tc) Surface Mount 1206-8 ChipFET™ |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
| Email: | [email protected] |
