NVD5867NLT4G-TB01
Part Number:
NVD5867NLT4G-TB01
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET N-CH 60V 22A DPAK DPAK
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
52380 Pieces
Delivery Time:
1-2 days
Data sheet:
NVD5867NLT4G-TB01.pdf

Introduction

NVD5867NLT4G-TB01 best price and fast delivery.
BOSER Technology is the distributor for NVD5867NLT4G-TB01, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for NVD5867NLT4G-TB01 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:DPAK-3
Series:Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:39 mOhm @ 11A, 10V
Power Dissipation (Max):3.3W (Ta), 43W (Tc)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:675pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:15nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):60V
Detailed Description:N-Channel 60V 6A (Ta), 22A (Tc) 3.3W (Ta), 43W (Tc) Surface Mount DPAK-3
Current - Continuous Drain (Id) @ 25°C:6A (Ta), 22A (Tc)
Email:[email protected]

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