NVD5863NLT4G-VF01
NVD5863NLT4G-VF01
Part Number:
NVD5863NLT4G-VF01
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET N-CH 60V 14.9A DPAK
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
54985 Pieces
Delivery Time:
1-2 days
Data sheet:
NVD5863NLT4G-VF01.pdf

Introduction

NVD5863NLT4G-VF01 best price and fast delivery.
BOSER Technology is the distributor for NVD5863NLT4G-VF01, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for NVD5863NLT4G-VF01 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:3V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:DPAK
Series:-
Rds On (Max) @ Id, Vgs:7.1 mOhm @ 41A, 10V
Power Dissipation (Max):3.1W (Ta), 96W (Tc)
Packaging:Original-Reel®
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names:NVD5863NLT4G-VF01DKR
NVD5863NLT4G-VF01DKR-ND
NVD5863NLT4GOSDKR
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:6 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:3850pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:70nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):60V
Detailed Description:N-Channel 60V 14.9A (Ta), 82A (Tc) 3.1W (Ta), 96W (Tc) Surface Mount DPAK
Current - Continuous Drain (Id) @ 25°C:14.9A (Ta), 82A (Tc)
Email:[email protected]

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