NVD5807NT4G-VF01
NVD5807NT4G-VF01
Part Number:
NVD5807NT4G-VF01
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET N-CH 40V 23A DPAK
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
58862 Pieces
Delivery Time:
1-2 days
Data sheet:
NVD5807NT4G-VF01.pdf

Introduction

NVD5807NT4G-VF01 best price and fast delivery.
BOSER Technology is the distributor for NVD5807NT4G-VF01, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for NVD5807NT4G-VF01 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:DPAK
Series:-
Rds On (Max) @ Id, Vgs:31 mOhm @ 5A, 10V
Power Dissipation (Max):33W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names:NVD5807NT4G-ND
NVD5807NT4G-VF01
NVD5807NT4G-VF01TR
NVD5807NT4G-VF01TR-ND
NVD5807NT4GOSTR
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:4 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:603pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:20nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):40V
Detailed Description:N-Channel 40V 23A (Tc) 33W (Tc) Surface Mount DPAK
Current - Continuous Drain (Id) @ 25°C:23A (Tc)
Email:[email protected]

Quick Request Quote

Part Number
Quantity
Company
E-mail
Phone
Comments