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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > JAN2N3767
JAN2N3767
Part Number:
JAN2N3767
Manufacturer:
Microsemi
Description:
TRANS NPN 80V 4A
[LeadFreeStatus]未找到翻译
Contains lead / RoHS non-compliant
Quantity:
68736 Pieces
Delivery Time:
1-2 days
Data sheet:
JAN2N3767.pdf
Inquiry

Introduction

JAN2N3767 best price and fast delivery.
BOSER Technology is the distributor for JAN2N3767, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for JAN2N3767 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Collector Emitter Breakdown (Max):80V
Vce Saturation (Max) @ Ib, Ic:2.5V @ 100mA, 1A
Transistor Type:NPN
Supplier Device Package:TO-66 (TO-213AA)
Series:Military, MIL-PRF-19500/518
Power - Max:25W
Packaging:Bulk
Package / Case:TO-213AA, TO-66-2
Other Names:1086-20915
1086-20915-MIL
Operating Temperature:-65°C ~ 200°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:22 Weeks
Lead Free Status / RoHS Status:Contains lead / RoHS non-compliant
Frequency - Transition:-
Detailed Description:Bipolar (BJT) Transistor NPN 80V 4A 25W Surface Mount TO-66 (TO-213AA)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 500mA, 5V
Current - Collector Cutoff (Max):500µA
Current - Collector (Ic) (Max):4A
Email:[email protected]

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