HGTP10N120BN
Part Number:
HGTP10N120BN
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
IGBT 1200V 35A 298W TO220AB
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
67515 Pieces
Delivery Time:
1-2 days
Data sheet:
1.HGTP10N120BN.pdf2.HGTP10N120BN.pdf

Introduction

HGTP10N120BN best price and fast delivery.
BOSER Technology is the distributor for HGTP10N120BN, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for HGTP10N120BN by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Collector Emitter Breakdown (Max):1200V
Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 10A
Test Condition:960V, 10A, 10 Ohm, 15V
Td (on/off) @ 25°C:23ns/165ns
Switching Energy:320µJ (on), 800µJ (off)
Supplier Device Package:TO-220AB
Series:-
Power - Max:298W
Packaging:Tube
Package / Case:TO-220-3
Other Names:HGTP10N120BN-ND
HGTP10N120BNFS
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Type:Standard
IGBT Type:NPT
Gate Charge:100nC
Detailed Description:IGBT NPT 1200V 35A 298W Through Hole TO-220AB
Current - Collector Pulsed (Icm):80A
Current - Collector (Ic) (Max):35A
Email:[email protected]

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