HGTP3N60A4D
Part Number:
HGTP3N60A4D
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
IGBT 600V 17A 70W TO220AB
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
62559 Pieces
Delivery Time:
1-2 days
Data sheet:
1.HGTP3N60A4D.pdf2.HGTP3N60A4D.pdf

Introduction

HGTP3N60A4D best price and fast delivery.
BOSER Technology is the distributor for HGTP3N60A4D, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for HGTP3N60A4D by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Collector Emitter Breakdown (Max):600V
Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 3A
Test Condition:390V, 3A, 50 Ohm, 15V
Td (on/off) @ 25°C:6ns/73ns
Switching Energy:37µJ (on), 25µJ (off)
Supplier Device Package:TO-220AB
Series:-
Reverse Recovery Time (trr):29ns
Power - Max:70W
Packaging:Tube
Package / Case:TO-220-3
Other Names:HGTP3N60A4D_NL
HGTP3N60A4D_NL-ND
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Type:Standard
IGBT Type:-
Gate Charge:21nC
Detailed Description:IGBT 600V 17A 70W Through Hole TO-220AB
Current - Collector Pulsed (Icm):40A
Current - Collector (Ic) (Max):17A
Email:[email protected]

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