EMD29T2R
EMD29T2R
Part Number:
EMD29T2R
Manufacturer:
LAPIS Semiconductor
Description:
TRANS NPN/PNP PREBIAS 0.12W EMT6
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
56356 Pieces
Delivery Time:
1-2 days
Data sheet:
1.EMD29T2R.pdf2.EMD29T2R.pdf

Introduction

EMD29T2R best price and fast delivery.
BOSER Technology is the distributor for EMD29T2R, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for EMD29T2R by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Collector Emitter Breakdown (Max):50V, 12V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA
Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package:EMT6
Series:-
Resistor - Emitter Base (R2):10 kOhms
Resistor - Base (R1):1 kOhms, 10 kOhms
Power - Max:120mW
Packaging:Original-Reel®
Package / Case:SOT-563, SOT-666
Other Names:EMD29T2RDKR
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:10 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:250MHz, 260MHz
Detailed Description:Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V, 12V 100mA, 500mA 250MHz, 260MHz 120mW Surface Mount EMT6
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V / 140 @ 100mA, 2V
Current - Collector Cutoff (Max):500nA
Current - Collector (Ic) (Max):100mA, 500mA
Base Part Number:*MD29
Email:[email protected]

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