EMD30T2R
EMD30T2R
Part Number:
EMD30T2R
Manufacturer:
LAPIS Semiconductor
Description:
TRANS NPN/PNP PREBIAS 0.15W EMT6
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
48064 Pieces
Delivery Time:
1-2 days
Data sheet:
EMD30T2R.pdf

Introduction

EMD30T2R best price and fast delivery.
BOSER Technology is the distributor for EMD30T2R, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for EMD30T2R by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Collector Emitter Breakdown (Max):50V, 30V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA / 300mV @ 2.5mA, 50mA
Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package:EMT6
Series:-
Resistor - Emitter Base (R2):10 kOhms
Resistor - Base (R1):10 kOhms, 1 kOhms
Power - Max:150mW
Packaging:Tape & Reel (TR)
Package / Case:SOT-563, SOT-666
Other Names:EMD30T2R-ND
EMD30T2RTR
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:250MHz, 260MHz
Detailed Description:Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V, 30V 100mA, 200mA 250MHz, 260MHz 150mW Surface Mount EMT6
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V / 140 @ 100mA, 2V
Current - Collector Cutoff (Max):500nA
Current - Collector (Ic) (Max):100mA, 200mA
Base Part Number:*MD30
Email:[email protected]

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