| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Voltage - Collector Emitter Breakdown (Max): | 160V |
| Vce Saturation (Max) @ Ib, Ic: | 200mV @ 5mA, 50mA |
| Transistor Type: | NPN |
| Supplier Device Package: | TO-92-3 |
| Series: | - |
| Power - Max: | 630mW |
| Packaging: | Tube |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
| Other Names: | 2N5551P 2N5551P-ND 933215530412 |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Frequency - Transition: | 300MHz |
| Detailed Description: | Bipolar (BJT) Transistor NPN 160V 300mA 300MHz 630mW Through Hole TO-92-3 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
| Current - Collector Cutoff (Max): | 50nA (ICBO) |
| Current - Collector (Ic) (Max): | 300mA |
| Base Part Number: | 2N5551 |
| Email: | [email protected] |
