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AOS releases 1200V silicon carbide MOS transistors (αSiC MOSFETs)
A few days ago, Alpha and Omega Semiconductor Limited (AOS, Nasdaq code: AOSL), a well-known supplier of power semiconductors, chips and digital power products integrating design, R&D, production and global sales, launched an optimized TO-247-4L package , A new 1200V silicon carbide MOS tube (αSiC MOSFET) in line with the AEC-Q101 standard—AOM033V120X2Q. This 1200V silicon carbide MOS tube is a TO-247-4L car-gauge package that can accept 15V standard gate drivers, and provides the industry's leading lowest on-resistance, meeting the requirements of electric vehicle (EV) vehicle chargers and motor drive inverters High efficiency and reliability requirements for chargers and on-board charging piles.
With the accelerating development of the electric vehicle market by millions of units each year, automakers are increasingly implementing 800V electrical systems to reduce the size and weight of the system while also extending the EV cruising range. Significantly improve its charging speed. AOS 1200V automotive-grade αSiC MOSFET is specially designed for these demanding application requirements. Compared with traditional silicon devices, it has excellent switching performance and efficiency.
AOM033V120X2Q is a 1200V/33mΩ SiC MOS tube, based on our second-generation αSiC MOSFET platform, using TO-247-4L optimized package. Unlike the standard 3-pin package, the use of additional Kelvin Source sensing pins can reduce the parasitic inductance on the internal loop of the package, allowing the device to work at a higher switching frequency. Compared with the standard package, the switching loss can be reduced by up to 75%. Its gate drive voltage is only 15V, which allows the gate driver to have the widest compatibility, making it easy to use in various system designs. In addition, αSiC MOSFET has a very small increase in on-resistance at a high temperature of 175°C, which greatly reduces power loss and further improves efficiency.
"In order to continue to promote electric vehicle technology to replace traditional internal combustion engine-based transportation vehicles, automakers are working hard to expand the cruising range and shorten the charging time. With the release of 1200V αSiC MOSFETs that meet the vehicle regulatory verification standards, AOS can provide designers Provide more advanced next-generation semiconductor technologies to improve efficiency and achieve energy efficiency goals." David Sheridan, senior director of wide bandgap products at AOS, said, "Due to the combination of product performance, reliability, and a supply chain with mass production capabilities, our customers have chosen our technology."
The αSiC MOSFET product portfolio will be expanded in the second half of this year to include a wider range of static on-resistances and more packaging options, as well as more products that have passed the AEC-Q101 automotive certification standards. Please wait and see.
With the accelerating development of the electric vehicle market by millions of units each year, automakers are increasingly implementing 800V electrical systems to reduce the size and weight of the system while also extending the EV cruising range. Significantly improve its charging speed. AOS 1200V automotive-grade αSiC MOSFET is specially designed for these demanding application requirements. Compared with traditional silicon devices, it has excellent switching performance and efficiency.
AOM033V120X2Q is a 1200V/33mΩ SiC MOS tube, based on our second-generation αSiC MOSFET platform, using TO-247-4L optimized package. Unlike the standard 3-pin package, the use of additional Kelvin Source sensing pins can reduce the parasitic inductance on the internal loop of the package, allowing the device to work at a higher switching frequency. Compared with the standard package, the switching loss can be reduced by up to 75%. Its gate drive voltage is only 15V, which allows the gate driver to have the widest compatibility, making it easy to use in various system designs. In addition, αSiC MOSFET has a very small increase in on-resistance at a high temperature of 175°C, which greatly reduces power loss and further improves efficiency.
"In order to continue to promote electric vehicle technology to replace traditional internal combustion engine-based transportation vehicles, automakers are working hard to expand the cruising range and shorten the charging time. With the release of 1200V αSiC MOSFETs that meet the vehicle regulatory verification standards, AOS can provide designers Provide more advanced next-generation semiconductor technologies to improve efficiency and achieve energy efficiency goals." David Sheridan, senior director of wide bandgap products at AOS, said, "Due to the combination of product performance, reliability, and a supply chain with mass production capabilities, our customers have chosen our technology."
The αSiC MOSFET product portfolio will be expanded in the second half of this year to include a wider range of static on-resistances and more packaging options, as well as more products that have passed the AEC-Q101 automotive certification standards. Please wait and see.