| Tillstånd | New and Original |
|---|---|
| Ursprung | Contact us |
| Distributör | Boser Technology |
| Spänning - Samlare Emitter Breakdown (Max): | 40V |
| Vce Mättnad (Max) @ Ib, Ic: | 1.15V @ 8mA, 800mA |
| Transistortyp: | NPN - Pre-Biased |
| Leverantörs Device Package: | TO-92-3 |
| Serier: | - |
| Motstånd - Emitterbas (R2): | 1 kOhms |
| Motstånd - Bas (R1): | 1 kOhms |
| Effekt - Max: | 700mW |
| Förpackning: | Tape & Box (TB) |
| Förpackning / Fodral: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Andra namn: | 934058999126 PBRN113ES AMO PBRN113ES AMO-ND |
| Monteringstyp: | Through Hole |
| Fuktkänslighetsnivå (MSL): | 1 (Unlimited) |
| Ledningsfri status / RoHS-status: | Lead free / RoHS Compliant |
| detaljerad beskrivning: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 800mA 700mW Through Hole TO-92-3 |
| Likströmsstigning (hFE) (Min) @ Ic, Vce: | 180 @ 300mA, 5V |
| Nuvarande - Collector Cutoff (Max): | 500nA |
| Nuvarande - Samlare (Ic) (Max): | 800mA |
| Bas-delenummer: | PBRN113 |
| Email: | [email protected] |
