| Tillstånd | New and Original |
|---|---|
| Ursprung | Contact us |
| Distributör | Boser Technology |
| Vgs (th) (Max) @ Id: | 4V @ 118µA |
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverantörs Device Package: | PG-TO262-3 |
| Serier: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 3.2 mOhm @ 100A, 10V |
| Effektdissipation (Max): | 188W (Tc) |
| Förpackning: | Tube |
| Förpackning / Fodral: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Andra namn: | IPI032N06N3 G-ND IPI032N06N3G SP000451490 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstyp: | Through Hole |
| Fuktkänslighetsnivå (MSL): | 1 (Unlimited) |
| Ledningsfri status / RoHS-status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 13000pF @ 30V |
| Gate Laddning (Qg) (Max) @ Vgs: | 165nC @ 10V |
| FET-typ: | N-Channel |
| FET-funktionen: | - |
| Drivspänning (Max Rds På, Min Rds På): | 10V |
| Avlopp till källspänning (Vdss): | 60V |
| detaljerad beskrivning: | N-Channel 60V 120A (Tc) 188W (Tc) Through Hole PG-TO262-3 |
| Ström - Kontinuerlig avlopp (Id) @ 25 ° C: | 120A (Tc) |
| Email: | [email protected] |
