| Kondisi | New and Original |
|---|---|
| Asal | Contact us |
| Distributor | Boser Technology |
| Vgs (th) (Max) @ Id: | 1.5V @ 250µA |
| Vgs (Max): | ±12V |
| Teknologi: | MOSFET (Metal Oxide) |
| Paket Perangkat pemasok: | Micro3™/SOT-23 |
| Seri: | HEXFET® |
| Rds Pada (Max) @ Id, Vgs: | 600 mOhm @ 610mA, 4.5V |
| Power Disipasi (Max): | 540mW (Ta) |
| Pengemasan: | Cut Tape (CT) |
| Paket / Case: | TO-236-3, SC-59, SOT-23-3 |
| Nama lain: | *IRLML6302TR IRLML6302 IRLML6302-ND IRLML6302CT |
| Suhu Operasional: | -55°C ~ 150°C (TJ) |
| mount Jenis: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Status Gratis Memimpin / Status RoHS: | Contains lead / RoHS non-compliant |
| Kapasitansi Masukan (Ciss) (Max) @ VDS: | 97pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs: | 3.6nC @ 4.45V |
| FET Jenis: | P-Channel |
| Fitur FET: | - |
| Drive Voltage (Max Rds On, Min RDS Aktif): | 2.7V, 4.5V |
| Tiriskan untuk Sumber Tegangan (Vdss): | 20V |
| Detil Deskripsi: | P-Channel 20V 780mA (Ta) 540mW (Ta) Surface Mount Micro3™/SOT-23 |
| Current - Continuous Drain (Id) @ 25 ° C: | 780mA (Ta) |
| Email: | [email protected] |
