| Kondisi | New and Original |
|---|---|
| Asal | Contact us |
| Distributor | Boser Technology |
| Vgs (th) (Max) @ Id: | 5V @ 100µA |
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Paket Perangkat pemasok: | DIRECTFET™ MZ |
| Seri: | HEXFET® |
| Rds Pada (Max) @ Id, Vgs: | 100 mOhm @ 4.2A, 10V |
| Power Disipasi (Max): | 2.8W (Ta), 57W (Tc) |
| Pengemasan: | Cut Tape (CT) |
| Paket / Case: | DirectFET™ Isometric MZ |
| Nama lain: | IRF6785MTR1PBFCT |
| Suhu Operasional: | -40°C ~ 150°C (TJ) |
| mount Jenis: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
| Kapasitansi Masukan (Ciss) (Max) @ VDS: | 1500pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V |
| FET Jenis: | N-Channel |
| Fitur FET: | - |
| Drive Voltage (Max Rds On, Min RDS Aktif): | 10V |
| Tiriskan untuk Sumber Tegangan (Vdss): | 200V |
| Detil Deskripsi: | N-Channel 200V 3.4A (Ta), 19A (Tc) 2.8W (Ta), 57W (Tc) Surface Mount DIRECTFET™ MZ |
| Current - Continuous Drain (Id) @ 25 ° C: | 3.4A (Ta), 19A (Tc) |
| Email: | [email protected] |
