| État | New and Original |
|---|---|
| Origine | Contact us |
| Distributeur | Boser Technology |
| Vgs (th) (Max) @ Id: | 4.5V @ 1mA |
| Vgs (Max): | ±20V |
| La technologie: | MOSFET (Metal Oxide) |
| Package composant fournisseur: | TO-3PF |
| Séries: | - |
| Rds On (Max) @ Id, Vgs: | 150 mOhm @ 12.5A, 10V |
| Dissipation de puissance (max): | 150W (Tc) |
| Emballage: | Tube |
| Package / Boîte: | TO-3P-3 Full Pack |
| Température de fonctionnement: | 150°C (TJ) |
| Type de montage: | Through Hole |
| Niveau de sensibilité à l'humidité (MSL): | 1 (Unlimited) |
| Statut sans plomb / Statut RoHS: | Lead free / RoHS Compliant |
| Capacité d'entrée (Ciss) (Max) @ Vds: | 3250pF @ 10V |
| Charge de la porte (Qg) (Max) @ Vgs: | 88nC @ 10V |
| type de FET: | N-Channel |
| Fonction FET: | - |
| Tension d'entraînement (Max Rds activé, Min Rds activé): | 10V |
| Tension drain-source (Vdss): | 600V |
| Description détaillée: | N-Channel 600V 25A (Tc) 150W (Tc) Through Hole TO-3PF |
| Courant - Drainage continu (Id) à 25 ° C: | 25A (Tc) |
| Email: | [email protected] |
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