| État | New and Original |
|---|---|
| Origine | Contact us |
| Distributeur | Boser Technology |
| Tension - Inverse de crête (max): | Standard |
| Tension - directe (Vf) (max) @ Si: | 1A |
| Tension - Ventilation: | - |
| Séries: | - |
| État RoHS: | Tape & Reel (TR) |
| Temps de recouvrement inverse (trr): | Standard Recovery >500ns, > 200mA (Io) |
| Résistance @ Si, F: | - |
| Polarisation: | Axial |
| Type de montage: | Through Hole |
| Niveau de sensibilité à l'humidité (MSL): | 1 (Unlimited) |
| Référence fabricant: | DSK10B-BT |
| Description élargie: | Diode Standard 100V 1A Through Hole |
| Configuration diode: | 10µA @ 100V |
| La description: | DIODE GEN PURP 100V 1A AXIAL |
| Courant - fuite, inverse à Vr: | 1.1V @ 1A |
| Courant - Moyen redressé (Io) (par diode): | 100V |
| Capacité à Vr, F: | 150°C (Max) |
| Email: | [email protected] |
| image | Modèle de produit | Fabricant | La description | Vue |
|---|---|---|---|---|
 |
DSK-3R3H204T614-H2L | Elna America | CAP 200MF -20% +80% 3.3V SMD | Enquête |
 |
DSK10B-AT1 | ON Semiconductor | DIODE GEN PURP 100V 1A AXIAL | Enquête |
 |
DSK10E-AT1 | ON Semiconductor | DIODE GEN PURP 400V 1A AXIAL | Enquête |
 |
DSK5J01Q0L | Panasonic | JFET N-CH 30MA 150MW SMINI3-F2-B | Enquête |
 |
BAT43W RHG | TSC (Taiwan Semiconductor) | DIODE SCHOTTKY 30V 200MA SOD123 | Enquête |
|
DSK-3R3H334T-HL | Elna America | CAP 330MF -20% +80% 3.3V SMD | Enquête |
|
DSK10C-AT1 | ON Semiconductor | DIODE GEN PURP 200V 1A AXIAL | Enquête |
|
DSK10E | ON Semiconductor | DIODE GEN PURP 400V 1A AXIAL | Enquête |
 |
DSK9J01P0L | Panasonic | JFET N-CH 30MA 125MW SSMINI3 | Enquête |
 |
VS-95PF40T | Vishay Semiconductor Diodes Division | DIODE STD RECOVERY 95A DO-5 | Enquête |
|
DSK10C-BT | ON Semiconductor | DIODE GEN PURP 200V 1A AXIAL | Enquête |
|
DSK-3R3H703T414-HRL | Elna America | CAP 70MF -20% +80% 3.3V SMD | Enquête |
|
DSK-3R3H224U-HL | Elna America | CAP 220MF -20% +80% 3.3V SMD | Enquête |
|
DSK10E-ET1 | ON Semiconductor | DIODE GEN PURP 400V 1A AXIAL | Enquête |
|
DSK5J01P0L | Panasonic | JFET N-CH 30MA 150MW SMINI3-F2-B | Enquête |
|
DSK10B | ON Semiconductor | DIODE GEN PURP 100V 1A AXIAL | Enquête |
|
DSK10C | ON Semiconductor | DIODE GEN PURP 200V 1A AXIAL | Enquête |
|
DSK10C-ET1 | ON Semiconductor | DIODE GEN PURP 200V 1A AXIAL | Enquête |
|
DSK10E-BT | ON Semiconductor | DIODE GEN PURP 400V 1A AXIAL | Enquête |
|
DSK-3R3H703T414-HLL | Elna America | CAP 70MF -20% +80% 3.3V SMD | Enquête |