| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 1V @ 250µA |
| Vgs (Max): | ±8V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PowerPAK® SC-70-6 Single |
| Serie: | TrenchFET® Gen III |
| Rds On (Max) @ Id, Vgs: | 13 mOhm @ 5A, 4.5V |
| Power Dissipation (Max): | 19W (Tc) |
| Emballage: | Cut Tape (CT) |
| Pakke / tilfælde: | PowerPAK® SC-70-6 |
| Andre navne: | SIA477EDJT-T1-GE3CT |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 3050pF @ 6V |
| Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 4.5V |
| FET Type: | P-Channel |
| FET-funktion: | - |
| Drevspænding (Maks. RDS On, Min Rds On): | 1.8V, 4.5V |
| Afløb til Source Voltage (VDSS): | 12V |
| Detaljeret beskrivelse: | P-Channel 12V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 12A (Tc) |
| Email: | [email protected] |
