| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 2.1V @ 1mA |
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | LFPAK56, Power-SO8 |
| Serie: | TrenchMOS™ |
| Rds On (Max) @ Id, Vgs: | 4.1 mOhm @ 25A, 10V |
| Power Dissipation (Max): | 238W (Ta) |
| Pakke / tilfælde: | SC-100, SOT-669 |
| Andre navne: | 934069893115 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 7853pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 103nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Drevspænding (Maks. RDS On, Min Rds On): | 5V, 10V |
| Afløb til Source Voltage (VDSS): | 60V |
| Detaljeret beskrivelse: | N-Channel 60V 100A (Ta) 238W (Ta) Surface Mount LFPAK56, Power-SO8 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 100A (Ta) |
| Email: | [email protected] |
