| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 2.35V @ 25µA |
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | DIRECTFET™ SQ |
| Serie: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 3.8 mOhm @ 19A, 10V |
| Power Dissipation (Max): | 2.2W (Ta), 42W (Tc) |
| Emballage: | Cut Tape (CT) |
| Pakke / tilfælde: | DirectFET™ Isometric SQ |
| Andre navne: | IRF6711STR1PBFCT |
| Driftstemperatur: | -40°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1810pF @ 13V |
| Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 4.5V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Drevspænding (Maks. RDS On, Min Rds On): | 4.5V, 10V |
| Afløb til Source Voltage (VDSS): | 25V |
| Detaljeret beskrivelse: | N-Channel 25V 19A (Ta), 84A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SQ |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 19A (Ta), 84A (Tc) |
| Email: | [email protected] |
