| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 2.25V @ 250µA |
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | DIRECTFET™ ST |
| Serie: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 8.3 mOhm @ 12.7A, 10V |
| Power Dissipation (Max): | 2.1W (Ta), 42W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | DirectFET™ Isometric ST |
| Andre navne: | IRF6614TR1PBF-ND IRF6614TR1PBFTR SP001524574 |
| Driftstemperatur: | -40°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 2560pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 4.5V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Drevspænding (Maks. RDS On, Min Rds On): | 4.5V, 10V |
| Afløb til Source Voltage (VDSS): | 40V |
| Detaljeret beskrivelse: | N-Channel 40V 12.7A (Ta), 55A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 12.7A (Ta), 55A (Tc) |
| Email: | [email protected] |
