| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 2.8V @ 10mA |
| Vgs (Max): | +25V, -10V |
| Teknologi: | SiCFET (Silicon Carbide) |
| Leverandør Device Package: | TO-247-3 |
| Serie: | Z-FET™ |
| Rds On (Max) @ Id, Vgs: | 52 mOhm @ 40A, 20V |
| Power Dissipation (Max): | 330W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-247-3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 52 Weeks |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1893pF @ 1000V |
| Gate Charge (Qg) (Max) @ Vgs: | 115nC @ 20V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Drevspænding (Maks. RDS On, Min Rds On): | 20V |
| Afløb til Source Voltage (VDSS): | 1200V |
| Detaljeret beskrivelse: | N-Channel 1200V 60A (Tc) 330W (Tc) Through Hole TO-247-3 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 60A (Tc) |
| Email: | [email protected] |
