| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 1.5V @ 1mA |
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | TO-92-3 |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 8 Ohm @ 100mA, 2.8V |
| Power Dissipation (Max): | 350mW (Ta) |
| Emballage: | Tape & Box (TB) |
| Pakke / tilfælde: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Andre navne: | BS108ZL1GOS BS108ZL1GOS-ND BS108ZL1GOSTB |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 150pF @ 25V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Drevspænding (Maks. RDS On, Min Rds On): | 2V, 2.8V |
| Afløb til Source Voltage (VDSS): | 200V |
| Detaljeret beskrivelse: | N-Channel 200V 250mA (Ta) 350mW (Ta) Through Hole TO-92-3 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 250mA (Ta) |
| Email: | [email protected] |
