| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 2.5V @ 1mA |
| Teknologi: | SiCFET (Silicon Carbide) |
| Leverandør Device Package: | D3 |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 175 mOhm @ 10A, 20V |
| Power Dissipation (Max): | 175W (Tc) |
| Emballage: | Bulk |
| Pakke / tilfælde: | D-3 Module |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Chassis Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Gate Charge (Qg) (Max) @ Vgs: | 72nC @ 20V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Afløb til Source Voltage (VDSS): | 1200V |
| Detaljeret beskrivelse: | N-Channel 1200V 25A (Tc) 175W (Tc) Chassis Mount D3 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 25A (Tc) |
| Email: | [email protected] |
