| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 3.5V @ 1mA |
| Vgs (Max): | 20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | M-A1 |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 4 Ohm @ 500mA, 10V |
| Power Dissipation (Max): | 1W (Ta) |
| Emballage: | Bulk |
| Pakke / tilfælde: | 3-SIP |
| Driftstemperatur: | 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Blyfri Status / RoHS Status: | Contains lead / RoHS non-compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 45pF @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Drevspænding (Maks. RDS On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 80V |
| Detaljeret beskrivelse: | N-Channel 80V 500mA (Ta) 1W (Ta) Through Hole M-A1 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 500mA (Ta) |
| Email: | [email protected] |
