| Bedingung | New and Original |
|---|---|
| Ursprung | Contact us |
| Verteiler | Boser Technology |
| Spannung - Kollektor-Emitter-Durchbruch (max): | 50V |
| VCE Sättigung (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
| Transistor-Typ: | 2 NPN - Pre-Biased (Dual) |
| Supplier Device-Gehäuse: | SC-88/SC70-6/SOT-363 |
| Serie: | - |
| Widerstand - Emitterbasis (R2): | 47 kOhms |
| Widerstand - Basis (R1): | 2.2 kOhms |
| Leistung - max: | 187mW |
| Verpackung: | Tape & Reel (TR) |
| Verpackung / Gehäuse: | 6-TSSOP, SC-88, SOT-363 |
| Andere Namen: | SMUN5235DW1T1G-ND SMUN5235DW1T1GOSTR |
| Befestigungsart: | Surface Mount |
| Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
| Hersteller Standard Vorlaufzeit: | 40 Weeks |
| Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
| Frequenz - Übergang: | - |
| detaillierte Beschreibung: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363 |
| DC Stromgewinn (HFE) (Min) @ Ic, VCE: | 80 @ 5mA, 10V |
| Strom - Collector Cutoff (Max): | 500nA |
| Strom - Kollektor (Ic) (max): | 100mA |
| Basisteilenummer: | MUN52**DW1T |
| Email: | [email protected] |
