| Bedingung | New and Original |
|---|---|
| Ursprung | Contact us |
| Verteiler | Boser Technology |
| Spannung - Kollektor-Emitter-Durchbruch (max): | 50V |
| VCE Sättigung (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
| Transistor-Typ: | 1 NPN, 1 PNP - Pre - Biased (Base-Collector Junction) |
| Supplier Device-Gehäuse: | SOT-553 |
| Serie: | - |
| Widerstand - Emitterbasis (R2): | 22 kOhms |
| Widerstand - Basis (R1): | 22 kOhms |
| Leistung - max: | 500mW |
| Verpackung: | Tape & Reel (TR) |
| Verpackung / Gehäuse: | SOT-553 |
| Andere Namen: | NSVEMC2DXV5T1G-ND NSVEMC2DXV5T1GOSTR |
| Befestigungsart: | Surface Mount |
| Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
| Hersteller Standard Vorlaufzeit: | 6 Weeks |
| Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
| Frequenz - Übergang: | - |
| detaillierte Beschreibung: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre - Biased (Base-Collector Junction) 50V 100mA 500mW Surface Mount SOT-553 |
| DC Stromgewinn (HFE) (Min) @ Ic, VCE: | 60 @ 5mA, 10V |
| Strom - Collector Cutoff (Max): | 500nA |
| Strom - Kollektor (Ic) (max): | 100mA |
| Email: | [email protected] |
