| Bedingung | New and Original |
|---|---|
| Ursprung | Contact us |
| Verteiler | Boser Technology |
| VGS (th) (Max) @ Id: | 4.5V @ 4mA |
| Vgs (Max): | ±20V |
| Technologie: | MOSFET (Metal Oxide) |
| Supplier Device-Gehäuse: | TO-268HV |
| Serie: | HiPerFET™ |
| Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 90A, 10V |
| Verlustleistung (max): | 780W (Tc) |
| Verpackung / Gehäuse: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Betriebstemperatur: | -55°C ~ 150°C (TJ) |
| Befestigungsart: | Surface Mount |
| Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
| Hersteller Standard Vorlaufzeit: | 24 Weeks |
| Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
| Eingabekapazität (Ciss) (Max) @ Vds: | 10300pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 154nC @ 10V |
| Typ FET: | N-Channel |
| FET-Merkmal: | - |
| Antriebsspannung (Max Rds On, Min Rds On): | 10V |
| Drain-Source-Spannung (Vdss): | 200V |
| detaillierte Beschreibung: | N-Channel 200V 180A (Tc) 780W (Tc) Surface Mount TO-268HV |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C: | 180A (Tc) |
| Email: | [email protected] |
| Image | Artikelnummer | Hersteller | Beschreibung | Aussicht |
|---|---|---|---|---|
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IXFT15N100Q3 | IXYS Corporation | MOSFET N-CH 1000V 15A TO-268 | Anfrage |
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IXFT15N100Q | IXYS Corporation | MOSFET N-CH 1000V 15A TO-268 | Anfrage |
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IXFT17N80Q | IXYS Corporation | MOSFET N-CH 800V 17A TO-268(D3) | Anfrage |
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IXFT16N80P | IXYS Corporation | MOSFET N-CH 800V 16A TO-268 | Anfrage |
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IXFT1874 TR | IXYS Corporation | MOSFET N-CH TO268 | Anfrage |
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IXFT21N50Q | IXYS Corporation | MOSFET N-CH 500V 21A TO-268 | Anfrage |
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IXFT20N80Q | IXYS Corporation | MOSFET N-CH 800V 20A TO-268 | Anfrage |
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IXFT18N100Q3 | IXYS Corporation | MOSFET N-CH 1000V 18A TO-268 | Anfrage |
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IXFT170N25X3HV | IXYS Corporation | MOSFET N-CH 250V 170A TO268HV | Anfrage |