| Bedingung | New and Original |
|---|---|
| Ursprung | Contact us |
| Verteiler | Boser Technology |
| VGS (th) (Max) @ Id: | 4.5V @ 8mA |
| Vgs (Max): | ±30V |
| Technologie: | MOSFET (Metal Oxide) |
| Supplier Device-Gehäuse: | SOT-227B |
| Serie: | HiPerFET™ |
| Rds On (Max) @ Id, Vgs: | 750 mOhm @ 500mA, 10V |
| Verlustleistung (max): | 780W (Tc) |
| Verpackung: | Tube |
| Verpackung / Gehäuse: | SOT-227-4, miniBLOC |
| Betriebstemperatur: | -55°C ~ 150°C (TJ) |
| Befestigungsart: | Chassis Mount |
| Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
| Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
| Eingabekapazität (Ciss) (Max) @ Vds: | 7400pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 160nC @ 10V |
| Typ FET: | N-Channel |
| FET-Merkmal: | - |
| Antriebsspannung (Max Rds On, Min Rds On): | 10V |
| Drain-Source-Spannung (Vdss): | 1200V |
| detaillierte Beschreibung: | N-Channel 1200V 20A (Tc) 780W (Tc) Chassis Mount SOT-227B |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C: | 20A (Tc) |
| Email: | [email protected] |
| Image | Artikelnummer | Hersteller | Beschreibung | Aussicht |
|---|---|---|---|---|
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IXFN180N07 | IXYS Corporation | MOSFET N-CH 70V 180A SOT-227B | Anfrage |
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IXFN180N10 | IXYS Corporation | MOSFET N-CH 100V 180A SOT-227B | Anfrage |
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IXFN180N20 | IXYS Corporation | MOSFET N-CH 200V 180A SOT-227B | Anfrage |
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IXFN210N30P3 | IXYS Corporation | MOSFET N-CH 300V 192A SOT-227 | Anfrage |
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