| Bedingung | New and Original |
|---|---|
| Ursprung | Contact us |
| Verteiler | Boser Technology |
| VGS (th) (Max) @ Id: | 5V @ 1.5mA |
| Vgs (Max): | ±30V |
| Technologie: | MOSFET (Metal Oxide) |
| Supplier Device-Gehäuse: | TO-263 (IXFA) |
| Serie: | HiPerFET™, Polar3™ |
| Rds On (Max) @ Id, Vgs: | 800 mOhm @ 4A, 10V |
| Verlustleistung (max): | 180W (Tc) |
| Verpackung: | Tube |
| Verpackung / Gehäuse: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Betriebstemperatur: | -55°C ~ 150°C (TJ) |
| Befestigungsart: | Surface Mount |
| Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
| Hersteller Standard Vorlaufzeit: | 24 Weeks |
| Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
| Eingabekapazität (Ciss) (Max) @ Vds: | 705pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
| Typ FET: | N-Channel |
| FET-Merkmal: | - |
| Antriebsspannung (Max Rds On, Min Rds On): | 10V |
| Drain-Source-Spannung (Vdss): | 500V |
| detaillierte Beschreibung: | N-Channel 500V 8A (Tc) 180W (Tc) Surface Mount TO-263 (IXFA) |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C: | 8A (Tc) |
| Email: | [email protected] |
| Image | Artikelnummer | Hersteller | Beschreibung | Aussicht |
|---|---|---|---|---|
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IXFB120N50P2 | IXYS Corporation | MOSFET N-CH 500V 120A PLUS264 | Anfrage |
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IXFA7N60P3 | IXYS Corporation | MOSFET N-CH 600V 7A TO-263AA | Anfrage |
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IXFB100N50Q3 | IXYS Corporation | MOSFET N-CH 500V 100A PLUS264 | Anfrage |
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IXFB170N30P | IXYS Corporation | MOSFET N-CH TO-264 | Anfrage |
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IXFA6N120P | IXYS Corporation | MOSFET N-CH 1200V 6A D2PAK | Anfrage |
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IXFA90N20X3 | IXYS Corporation | 200V/90A ULTRA JUNCTION X3-CLASS | Anfrage |
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IXFA76N15T2 | IXYS Corporation | MOSFET N-CH 150V 76A TO263 | Anfrage |
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IXFA7N100P | IXYS Corporation | MOSFET N-CH 1000V 7A D2PAK | Anfrage |
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IXFA72N20X3 | IXYS Corporation | 200V/72A ULTRA JUNCTION X3-CLASS | Anfrage |
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IXFB100N50P | IXYS Corporation | MOSFET N-CH 500V 100A PLUS264 | Anfrage |
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IXFB132N50P3 | IXYS Corporation | MOSFET N-CH 500V 132A PLUS264 | Anfrage |